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16F(R)出口型-普通整流二极管

16F(R)出口型-普通整流二极管

FEATURES TYPICAL APPLICATIONS
1). High surge current capability 1). Battery charges
2). Avalanche types available 2). Converters
3). Stud cathode and stud anode version 3). Power supplies
4). Wide current range 4). Machine tool controls
5). Types up to 1200V VRRM
 
 
MAJOR RATINGS AND CHARACTERISTICS
Parameters 16F(R) Unit
IF(AV)   16 A
@ TC 140
IF(RMS)   25 A
IFSM @ 50Hz 350 A
@ 60Hz 370 A
I2t @ 50Hz 612 A2s
@ 60Hz 560 A2s
VRRM typical 100 to 1200 V
TJ typical - 65 to 175 μs
 
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings
Type number Voltage Code VRRM, maximum
repetitive peak
reverse voltage
VRSM, maximum non-
   repetitive peak
  reverse voltage
VR(BR), minimum
avalanche
voltage
*(1)
IRRM max.
@ TJ = 175℃
    V V   mA
16F(R) 10 100 150 -- 12
20 200 275 --
40 400 500 500
60 600 725 750
80 800 950 950
100 1000 1200 1150
120 1200 1400 1350
*(1) Avalanche version only available from VRRM 400V to 1200V.


2). Forward Conduction

Parameters 16F(R) Unit Conditions
IF(AV) Max. average forward current
@ Case temperature
16 A 180° conduction, half sine wave
140
IF(RMS) Max. RMS forward current 25 A  
PR Maximum non-repetitive
peak reverse power
15 K/W 10μs square pulse, TJ = TJ max.
see note *(2)
IFSM Max. peak, one-cycle forward,
non-repetitive surge current
350 A t = 10ms No voltage Sinusoidal half wave,
Initial TJ = TJ max.
370 t = 8.3ms reapplied
295 t = 10ms 100% VRRM
310 t = 8.3ms reapplied
I2t Maximum I2t for fusing 612 A2s t = 10ms No voltage
560 t = 8.3ms reapplied
435 t = 10ms 100% VRRM
395 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 6120 A2√S t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold voltage 1.23 V (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VF(TO)2 High level value of threshold voltage 5.70 (I > π x IF(AV)), TJ = TJ max.
Rf1 Low level value of forward slope resistance 7.80 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
Rf2 High level value of forward slope resistance 0.90 (I > π x IF(AV)), TJ = TJ max.
VFM Max. forward voltage drop 0.77 V Ipk= 50A, TJ = 25℃, tp = 400μs rectangular wave
TJ Max. junction operating temperature range -65 to 175  
Tstg Max. storage temperature range -65 to 200
RthJC Max. thermal resistance, junction to case 1.6 K/W DC operation
RthCS Max. thermal resistance, case to heatsink 0.5 Nm Mounting surface, smooth, ?at and greased
T Mounting torque, ± 10% 1.2 (1.5)   Lubricated threads (Not lubricated threads)
wt Approximate weight 7 (0.25) g (oz)  
  Case style DO-4 See Outline Table
*(2) Available only for Avalanche version, all other parameters the same as 6F.
 
 
ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.31 0.23 K/W TJ = TJ max.
120° 0.38 0.40
90° 0.49 0.54
60° 0.72 0.75
30° 1.20 1.21


PERFORMANCE CURVES FIGURE

Fig.1 – CurrentRatings Characteristic Fig.2 - CurrentRatings Characteristic
Fig.3 – On-state Power Loss Characteristics
Fig.4 – On-state Power Loss Characteristics
Fig.5 –Maximum Non-Repetitive Surge Current Fig.6 –Maximum Non-Repetitive Surge Current
Fig.7 – Forward Voltage Drop Characteristics Fig.8 – Thermal Impedance ZthJC Characteristics


OUTLINE