当前位置:柳晶首页 > 产品与解决方案 > 螺旋式半导体器件 > 出口型-普通整流二极管 > 60HF(R)出口型-普通整流二极管

60HF(R)出口型-普通整流二极管

60HF(R)出口型-普通整流二极管

FEATURES TYPICAL APPLICATIONS
1). High surge current capability 1). Battery charges
2). Avalanche types available 2). Converters
3). Stud cathode and stud anode version 3). Power supplies
4). Wide current range 4). Machine tool controls
5). Types up to 1600V VRRM 5). Welding
 
 
MAJOR RATINGS AND CHARACTERISTICS
Parameters 60HF(R) Unit
10 to 120 140 to 160
IF(AV)   60 60 A
@ TC 140 110
IF(RMS)   110 A
IFSM @ 50Hz 1200 A
@ 60Hz 1250 A
I2t @ 50Hz 7100 A2s
@ 60Hz 6450 A2s
VRRM typical 100 to 1200 1400, 1600 V
TJ typical - 65 to 180 - 65 to 150 μs
 
ELECTRICAL SPECIFICATIONS
1). Voltage Ratings
Type number Voltage Code VRRM, maximum
repetitive peak
reverse voltage
VRSM, maximum non-
repetitive peak
reverse voltage
VR(BR), minimum
avalanche
voltage
IRRM max.
@ TJ = TJ max.
    V V V mA
60HF(R) 10 100 200 200 15
20 200 300 300
40 400 500 500
60 600 720 725 9
80 800 960 950
100 1000 1200 1150
120 1200 1440 1350
140 1400 1650 1550 4.5
160 1600 1900 1750


2). Forward Conduction

Parameters 60HF(R) Unit Conditions
10 to 120 40 to 160
\IF(AV) Max. average forward current
@ Case temperature
60 60 A 180° conduction, half sine wave
140 110
IF(RMS) Max. RMS forward current 110 A  
IFSM Max. peak, one-cycle forward,
non-repetitive surge current
1200 A t = 10ms No voltage Sinusoidal half
wave,Initial
TJ = TJ max.
1250 t = 8.3ms reapplied
1000 t = 10ms 100% VRRM
1050 t = 8.3ms reapplied
I2t Maximum I2t for fusing 7100 A2s t = 10ms No voltage
6450 t = 8.3ms reapplied
5000 t = 10ms 100% VRRM
4550 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 71000 A2√S t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold voltage 0.79 V TJ = TJ max.
VF(TO)2 High level value of threshold voltage 1.00
Rf1 Low level value of forward slope resistance 2.33 TJ = TJ max.
Rf2 High level value of forward slope resistance 1.53
VFM Max. forward voltage drop 1.30 1.46 V Ipk= 190A, TJ = 25℃, tp = 400μs
rectangular wave
TJ Max. junction operating temperature range -65 to 190 -65 to 160  
Tstg Max. storage temperature range
RthJC Max. thermal resistance, junction to case 0.45 K/W DC operation
RthCS Max. thermal resistance, case to heatsink 0.25 Mounting surface, smooth, ?at and greased
T Mounting torque, ± 10% 3.4+0-10% Nm Not lubricated threads
30 lbf · in
2.3+0-10% Nm
20 lbf · in
wt Approximate weight 17 (0.6) g (oz) unleaded device
  Case style DO-5 See Outline Table


ΔRthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180° 0.08 0.06 K/W TJ = TJ max.
120° 0.10 0.11
90° 0.13 0.14
60° 0.19 0.20
30° 0.30 0.30


PERFORMANCE CURVES FIGURE

Fig.1 – CurrentRatings Characteristic Fig.2 - CurrentRatings Characteristic
Fig.3 – Current Ratings Characteristic Fig.4 – Current Ratings Characteristic
Fig.5 – Forward Power Loss Characteristics
Fig.6 – Forward Power Loss Characteristics
Fig.7 – Forward Power Loss Characteristics
Fig.8 – Forward Power Loss Characteristics
Fig.9 –Maximum Non-Repetitive Surge Current Fig.10 –Maximum Non-Repetitive Surge Current
Fig.11 – Forward Voltage Drop Characteristics
(up to 1200V)
Fig.12 – Forward Voltage Drop Characteristics
(for 1400V, 1600V)
Fig.13 – Thermal Impedance ZthJC Characteristics


OUTLINE