FEATURES	TYPICAL APPLICATIONS
1). Improved glass passivation for high reliability	1). Medium power switching
and exceptional stability at high temperature	2). Phase control applications
2). High di/dt and dv/dt capabilities	3). Can be supplied to meet stringent military
3). Standard package	aerospace and other high-reliability requirements
4). Low thermal resistance
5). Metric threads version available
6). Types up to 1600V VDRM/ VRRM
MAJOR RATINGS AND CHARACTERISTICS
Parameters K25RIA Unit 10 to120 140 to160 IF(AV)   25 25 A @ TC 85 85 ℃ IF(RMS)   40 40 A IFSM @ 50Hz 420 398 A @ 60Hz 440 415 A I2t @ 50Hz 867 795 A2s @ 60Hz 790 725 A2s VDRM/VRRM   100 to 1200 1400 to 1600 V Tq typical 110 μs TJ   - 65 to 125 ℃

ELECTRICAL SPECIFICATIONS
1). Voltage Ratings

Type number	Voltage Code	VDRM/VRRM, maximum repetitive peak reverse voltage *(1)	VRSM, maximum non- repetitive peak reverse voltage *(2)	IDRM/IRRM max. @ TJ = TJ max
		V	V	mA
K25RIA	10	100	150	20
	20	200	300	10
	40	400	500
	60	600	700
	80	800	900
	100	1000	1100
	120	1200	1300
	140	1400	1500
	160	1600	1700

*(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/μs
*(2) For voltage pulses with tp ≤ 5ms
 
 
2). Forward Conduction
 

Parameters		K25RIA		Unit	Conditions
		10to120	140to160
IT(AV)	Max. average forward current @ Case temperature	25	25	A	180° conduction, half sine wave
		85	85	℃
IT(RMS)	Max. RMS forward current	40	40	A
ITSM	Max. peak, one-cycle forward, non-repetitive surge current	420	398	A	t = 10ms	No voltage	Sinusoidal half wave, Initial TJ = TJ max.
		440	415		t = 8.3ms	reapplied
		350	335		t = 10ms	100% VRRM
		370	350		t = 8.3ms	reapplied
I2t	Maximum I2t for fusing	867	795	A2s	t = 10ms	No voltage
		790	725		t = 8.3ms	reapplied
		615	560		t = 10ms	100% VRRM
		560	510		t = 8.3ms	reapplied
I2√t	Maximum I2√t for fusing	8670	7950	A2√S	t = 0.1 to 10ms, no voltage reapplied
VT(TO)1	Low level value of threshold voltage	0.99	0.99	V	(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
VT(TO)2	High level value of threshold voltage	1.40	1.15		(I > π x IF(AV)), TJ = TJ max.
rt1	Low level value of forward slope resistance	10.1	11.73	mΩ	(16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
rt2	High level value of forward slope resistance	5.7	10.05		(I > π x IF(AV)), TJ = TJ max.
VTM	Max. forward voltage drop	1.71	-	V	Ipk= 50A, TJ = 25℃ tp = 10ms sine pulse
		-	180
IH	Maximum holding current	130		mA	TJ = 25°C, anode supply 12V resistive load
IL	Typical latching current	200
di/dt	Max. rate of rise of turned-on current VDRM ≤ 600V VDRM ≤ 800V VDRM ≤ 1000V VDRM ≤ 1600V			A/μs	TJ = TJ max., VDM = rated VDRM Gate pulse = 20V, 15Ω, tp = 6μs, tr = 0.1μs max. ITM = (2x rated di/dt) A
		200
		180
		160
		150
tgt	Typical turn-on time	0.9		μs	TJ = 25℃, at = rated VDRM/VRRM, TJ = 125℃
trr	Typical reverse recovery time	4			TJ = TJ max., ITM = IT(AV), p > 200μs, di/dt = -10A/μs
tq	Typical turn-off time	110			TJ = TJ max., ITM = IT(AV), tp > 200μs, VR = 100V, di/dt = -10A/μs, dv/dt = 20V/μs linear to 67% VDRM, gate bias 0V-100W
dv/dt	Max. critical rate of rise of	100			TJ = TJ max. linear to 100% rated VDRM
	off-state voltage	300 (*)			TJ = TJ max. linear to 67% rated VDRM

(*) t_q = 10μsup to 600V, t_q = 30μs up to 1600V available on special request.
(**) Available with: dv/dt = 1000V/μs, to complete code add S90 i.e. K16RIA120S90
 
 
3). Triggering
 

Parameters		K25RIA		Unit	Conditions
PGM	Maximum peak gate power	8.0		W	TJ = TJ max.
PG(AV)	Maximum average gate power	2.0
IGM	Max. peak positive gate current	1.5		A	TJ = TJ max.
-VGM	Maximum peak negative gate voltage	10		V	TJ = TJ max.
IGT	DC gate current required to trigger	90		mA	TJ = - 65℃	Max. required gate trigger current/ voltage are the lowest value which will trigger all units 6V anode-to- cathode applied
		60			TJ = - 25℃
		35			TJ = - 125℃
VGT	DC gate voltage required to trigger	3.0			TJ = - 65℃
		2.0		V	TJ = - 25℃
		1.0		V	TJ = - 125℃
IGD	DC gate current not to trigger	2.0		mA	TJ = TJ max., VDRM = rated value
VGD	DC gate voltage not to trigger	0.2		V	TJ = TJ max	Max. gate current/ voltage not to trigger is the max. value which. will not trigger any unit with rated V DRM anode-to-cathode applied
					VDRM = rated value
TJ	Max. operating temperature range	- 65 to 125		℃
Tstg	Max. storage temperature range	- 65 to 125		℃
RthJC	Max. thermal resistance, junction to case	0.75		K/W	DC operation
RthCS	Max. thermal resistance, case to heatsink	0.35		K/W	Mounting surface, smooth, flat and greased
T	Mounting torque	to nut	to devic
		20(27.5)	25	lbf-in	Lubricated threads
		0.23(0.32)	0.29	kgf.m	(Non-lubricated threads)
		2.3(3.1)	2.8	Nm
wt	Approximate weight	14 (0.49)		g (oz)	See Outline Table
	Case style	TO-65

 
ΔR_thJC Conduction
(The following table shows the increment of thermal resistence R_thJC when devices operate at different conduction angles than DC)

Conduction angle	Sinusoidal conduction	Rectangular conduction	Units	Conditions
180°	0.17	0.13	K/W	TJ= TJ max.
120°	0.21	0.22
90°	0.27	0.30
60°	0.40	0.42
30°	0.69	0.70

 
PERFORMANCE CURVES FIGURE

Fig.1 – CurrentRatings Characteristic	Fig.2 - CurrentRatings Characteristic
Fig.3 – On-state Power Loss Characteristics
Fig.4 – On-state Power Loss Characteristics
Fig.5 –Maximum Non-Repetitive Surge Current	Fig.6 –Maximum Non-Repetitive Surge Current
Fig.7 – Forward Voltage Drop Characteristics
Fig.8 – Current Ratings Characteristics	Fig.9 – Current Ratings Characteristics
Fig.10 – on-state Power Loss Characteristics
Fig.11 – on-state Power Loss Characteristics
Fig.12 – Maximum Non-Repetitive Surge Current	Fig.13 – Maximum Non-Repetitive Surge Current
Fig.14 – Forward Voltage Drop Characteristics
Fig.15 –Thermal Impedance ZthJC Characteristics
Fig.16 – Gate Characteristics

 
OUTLINE