当前位置:柳晶首页 > 产品与解决方案 > 平板式半导体器件 > 国标型-普通晶闸管 > KP1200A普通晶闸管Y50KPE

KP1200A普通晶闸管Y50KPE

KP1200A普通晶闸管Y50KPE

 
FEATURES
 
1). Center amplifying gate
2). Metal case with ceramic insulator
3). Low on-state and switching losses
 
TYPICAL APPLICATIONS IT(AV) 1604A
1). AC controllers VDRM / VRRM 1100~1800V
2). DC and AC motor control ITSM 24KA
3). Controlled rectifiers I2t 2880 103A2S
 
THE MAIN PARAMETERS
 
SYMBOL CHARACTERISTIC TEST CONDITIONS Tj() VALUE UNIT
Min Type Max
IT(AV) Mean forward current 180O half sine wave 50Hz
Double side cooled,
Ths=55℃ 125     1604 A
Ths=79℃     1200
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM & VRRM,tp=10ms
VDSM &VRSM= VDRM &VRRM+100V
125 1100   1800 V
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VDM=VDRM
VRM= VRRM
125     80 mA
ITSM Surge on-state current 10ms half sine wave,
VR=0.6VRRM
125     24 KA
I2t I2T for fusing coordination     880 A2s*103
VTO Threshold voltage   125     0.91 V
rT Forward slop resistance     0.23
VTM Peak on-state voltage ITM=2550A, F=24.0KN 125     1.42 V
dv/dt Critical rate of rise of off-state voltage VDM=0.67VDRM 125     1000 V/μs
di/dt Critical rate of rise of on-state current VDM= 67%VDRM to 2000A,
Gate pulse tr ≤0.5μs IGM=1.5A
125     500 A/μs
Irm Reverse recovery current ITM=1500A, tp=1000μs,
di/dt=-20A/μs,VR=50V
125     178 A
trr Reverse recovery time     17.8 μs
Qrr Recovery charge     1588 μC
IGT Gate trigger current VA=12V, IA=1A 25 40   300 mA
VGT Gate trigger voltage 0.8   3.0 V
IH Holding current 20   300 mA
VGD Non-trigger gate voltage VDM=0.67VDRM 125 0.3     V
Rth(j-h) Thermal resistance
Junction to heatsink
At 180°sine, double side cooled
Clamping force 24.0KN
      0.024 ℃ /W
Fm Mounting force     19   26 KN
Tstg Stored temperature     -40   140
Wt Weight       470   g
Size Package box size 95×95×50 mm

 
PERFORMANCE CURVES FIGURE
 

Fig.1

Fig.2
 

Fig.3
 

Fig.4
 

Fig.5
 

Fig.6
 

Fig.7
 

Fig.8
 

Fig.9
 

Fig.10
 
 
OUTLINE