1). Two anti-paralled thyristors on one Si-wafer | |
2). Hermetic metal cases with ceramic insulators | |
3). Capsule packages for doubble sided cooling | |
TYPICAL APPLICATIONS | ||
1). High power industrical and | IT(AV) | 1220A |
power transmissior | VDRM / VRRM | 500~1800V |
2). DC and AC motor control | ITSM | 8.8 KA |
3). AC controllers | I2t | 387 103A2S |
SYMBOL | CHARACTERISTIC | TEST CONDITIONS | Tj(℃) | VALUE | UNIT | ||||
Min | Type | Max | |||||||
IT(AV) | RMS current | 50Hz sine wave Double side cooled | Ths=55℃ | 125 | 1220 | A | |||
Ths=89℃ | 800 | ||||||||
VDRM | Repetitive peak reverse voltage | VDRM tp=10ms, VDSM= VDRM +100V | 125 | 500 | 1800 | V | |||
IDRM | Repetitive peak current | VDM=VDRM | 125 | 50 | mA | ||||
ITSM | Surge on-state current | 10ms half sine wave, VR=0.6VRRM | 125 | 8.8 | KA | ||||
I2t | I2T for fusing coordination | 387 | A2s*103 | ||||||
VTO | Threshold voltage | 125 | 0.78 | V | |||||
rT | On-state slop resistance | 0.89 | mΩ | ||||||
VTM | Peak on-state voltage | ITM=1200A, F=18.0KN | 125 | 1.85 | V | ||||
dv/dt | Critical rate of rise of off-state voltage | VDM=0.67VDRM | 125 | 50 | V/μs | ||||
di/dt | Critical rate of rise of on-state current | VDM= 67%VDRM to 1000A, Gate pulse tr ≤0.5μs IGM=1.5A | 125 | 50 | A/μs | ||||
IGT | Gate trigger current | VA=12V, IA=1A | 25 | 20 | 350 | mA | |||
VGT | Gate trigger voltage | 0.8 | 3.5 | V | |||||
IH | Holding current | 20 | 400 | mA | |||||
Rth(j-h) | Thermal resistance Junction to heatsink | At 180°sine, double side cooled Clamping force 18.0KN | 0.032 | ℃ /W | |||||
Fm | Mounting force | 15 | 20 | KN | |||||
Tstg | Stored temperature | -40 | 140 | ℃ | |||||
Wt | Weight | 360 | g | ||||||
Size | Package box size | 95×95×50 | mm |