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KK400A800-1600V Y35KKE 国标型-快速晶闸管

KK400A800-1600V Y35KKE 国标型-快速晶闸管

FEATURES 
). Interdigitated amplifying gates
2). Fast turn-on and high di/dt
3). Low switching losses
  IT(AV) 740A
TYPICAL APPLICATIONS VDRM / VRRM 800~1600V
1). Inductive heating tq 24~50μs
2). Electronic welders ITSM 8.5 KA
3). Self-commutated inverters I2t 361 103A2S
 
THE MAIN PARAMETERS
 
SYMBOL CHARACTERISTIC TEST CONDITIONS Tj() VALUE UNIT
Min Type Max
IT(AV) Mean forward current 180O half sine wave 50Hz
Double side cooled,Ths=55℃
125     740 A
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM & VRRM,tp=10ms
VDSM &VRSM= VDRM &VRRM+100V
125 800   1600 V
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VDM=VDRM
VRM= VRRM
125     40 mA
ITSM Surge on-state current 10ms half sine wave,
VR=0.6VRRM
125     8.5 KA
I2t I2T for fusing coordination     361 A2s*103
VTO Threshold voltage   125     1.50 V
rT Forward slop resistance     0.66
VTM Peak on-state voltage ITM=1400A, F=15.0KN 125     2.42 V
dv/dt Critical rate of rise of off-state voltage VDM=0.67VDRM 125     500 V/μs
di/dt Critical rate of rise of on-state current VDM= 67%VDRM to 1000A,
Gate pulse tr ≤0.5μs IGM=1.5A
125     1200 A/μs
Irm Reverse recovery current ITM=700A, tp=1000μs,
di/dt=-20A/μs,VR=50V
125   49   A
trr Reverse recovery time   3.4   μs
Qrr Recovery charge   83 100 μC
tq Circuit commutated turn-off time ITM=700A, tp=1000μs, ,VR=50V
dv/dt=-30V/μs,di/dt=-20A/μs
  24   50 μs
IGT Gate trigger current VA=12V, IA=1A 25 40   250 mA
VGT Gate trigger voltage 0.9   2.5 V
IH Holding current 20   400 mA
VGD Non-trigger gate voltage VDM=0.67VDRM 125 0.3     V
Rth(j-h) Thermal resistance
Junction to heatsink
At 180°sine, double side cooled
Clamping force 15.0KN
      0.035 ℃ /W
Fm Mounting force     10   20 KN
Tstg Stored temperature     -40   140
Wt Weight       260   g
Size Package box size 95×95×50 mm

 
PERFORMANCE CURVES FIGURE
 

Fig.1

Fig.2
 

Fig.3
 

Fig.4
 

Fig.5
 

Fig.6
 
 
  
 
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