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●KK1000A800-1800V Y50KKE 国标型-快速晶闸管

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FEATURES

). Interdigitated amplifying gates
2). Fast turn-on and high di/dt
3). Low switching losses

	IT(AV)	1164A
TYPICAL APPLICATIONS	VDRM / VRRM	800~1800V
1). Inductive heating	tq	24~50μs
2). Electronic welders	ITSM	14 KA
3). Self-commutated inverters	I2t	980 103A2S

 
THE MAIN PARAMETERS
 

SYMBOL	CHARACTERISTIC	TEST CONDITIONS	Tj(℃)	VALUE				UNIT
				Min	Type	Max
ITAV)	Mean forward current	180O half sine wave 50Hz Double side cooled,Ths=55℃	125				1041	A
VDRM VRRM	Repetitive peak off-state voltage Repetitive peak reverse voltage	VDRM & VRRM,tp=10ms VDSM &VRSM= VDRM &VRRM+100V	125	800			1800	V
IDRM IRRM	Repetitive peak off-state current Repetitive peak reverse current	VDM=VDRM VRM= VRRM	125				80	mA
ITSM	Surge on-state current	10ms half sine wave, VR=0.6VRRM	125				14	KA
I2t	I2T for fusing coordination						980	A2s*103
VTO	Threshold voltage		125				1.56	V
rT	Forward slop resistance						0.33	mΩ
VTM	Peak on-state voltage	ITM=2000A, F=24.0KN	125				2.22	V
dv/dt	Critical rate of rise of off-state voltage	VDM=0.67VDRM	125				500	V/μs
di/dt	Critical rate of rise of on-state current	VDM= 67%VDRM to 1600A, Gate pulse tr ≤0.5μs IGM=1.5A	125				1200	A/μs
Irm	Reverse recovery current	ITM=1000A, tp=1000μs, di/dt=-20A/μs,VR=50V	125		100			A
trr	Reverse recovery time				5.8			μs
Qrr	Recovery charge				290		320	μC
tq	Circuit commutated turn-off time	ITM=1000A, tp=1000μs, ,VR=50V dv/dt=-30V/μs,di/dt=-20A/μs		24			50	μs
IGT	Gate trigger current	VA=12V, IA=1A	25	40			300	mA
VGT	Gate trigger voltage			0.9			3.0	V
IH	Holding current			20			500	mA
VGD	Non-trigger gate voltage	VDM=0.67VDRM	125	0.3				V
Rth(j-h)	Thermal resistance Junction to heatsink	At 180°sine, double side cooled Clamping force 24.0KN					0.024	℃ /W
Fm	Mounting force			19			26	KN
Tstg	Stored temperature			-40			130	℃
Wt	Weight				470			g
Size	Package box size	95×95×50						mm

 
PERFORMANCE CURVES FIGURE
 

Fig.1	Fig.2
Fig.3	Fig.4
Fig.5	Fig.6

 

  
 
 
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