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KK2000A1800V Y70KKE 国标型-快速晶闸管

KK2000A1800V Y70KKE 国标型-快速晶闸管

FEATURES
1). Interdigitated amplifying gates IT(AV) 1827A
2). Fast turn-on and high di/dt VDRM / VRRM 800~1800V
3). Low switching losses tq 35~60μs
  ITSM 23 KA
  I2t 2645 103A2S
TYPICAL APPLICATIONS
1). Inductive heating
2). Electronic welders
3). Self-commutated inverters
 
THE MAIN PARAMETERS
 
SYMBOL CHARACTERISTIC TEST CONDITIONS Tj() VALUE UNIT
Min Type Max
IT(AV) Mean forward current 180O half sine wave 50Hz
Double side cooled,Ths=55℃
125     1827 A
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM & VRRM,tp=10ms
VDSM &VRSM= VDRM &VRRM+100V
125 800   1800 V
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VDM=VDRM
VRM= VRRM
125     160 mA
ITSM Surge on-state current 10ms half sine wave,
VR=0.6VRRM
125     23 KA
I2t I2T for fusing coordination     2645 A2s*103
VTO Threshold voltage   125     1.45 V
rT Forward slop resistance     0.21
VTM Peak on-state voltage ITM=4000A, F=35KN 125     2.29 V
dv/dt Critical rate of rise of off-state voltage VDM=0.67VDRM 125     500 V/μs
di/dt Critical rate of rise of on-state current VDM= 67%VDRM to 3000A,
Gate pulse tr ≤0.5μs IGM=1.5A
125     1200 A/μs
Irm Reverse recovery current ITM=2000A, tp=1000μs,
di/dt=-20A/μs,
VR=50V
125   152   A
trr Reverse recovery time   8.5   μs
Qrr Recovery charge   646 700 μC
tq Circuit commutated turn-off time ITM=2000A,tp=1000μs, ,VR=50V
dv/dt=-30V/μs,di/dt=-20A/μs
125 35   60 μs
IGT Gate trigger current VA=12V, IA=1A 25 40   450 mA
VGT Gate trigger voltage 0.9   4.5 V
IH Holding current 20   1000 mA
VGD Non-trigger gate voltage VDM=0.67VDRM 125 0.3     V
Rth(j-h) Thermal resistance
Junction to heatsink
At 180°sine, double side cooled
Clamping force 35KN
      0.016 ℃ /W
Fm Mounting force     30   40 KN
Tstg Stored temperature     -40   140
Wt Weight       900   g
Size Package box size 160×145×65 mm

 
PERFORMANCE CURVES FIGURE
 

Fig.1

Fig.2
 

Fig.3
 

Fig.4
 

Fig.5
 

Fig.6
 
 
 
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