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KK3000A1900-2500V Y89KKG 国标型-快速晶闸管

KK3000A1900-2500V Y89KKG 国标型-快速晶闸管

FEATURES
1). Interdigitated amplifying gates IT(AV) 3208A
2). Fast turn-on and high di/dt VDRM / VRRM 1900~2500V
3). Low switching losses tq 60~110μs
  ITSM 44 KA
  I2t 9680 103A2S
TYPICAL APPLICATIONS
1). Inductive heating
2). Electronic welders
3). Self-commutated inverters
 
THE MAIN PARAMETERS
 
SYMBOL CHARACTERISTIC TEST CONDITIONS Tj() VALUE UNIT
Min Type Max
IT(AV) Mean forward current 180O half sine wave 50Hz
Double side cooled,Ths=55℃
125     3208 A
VDRM
VRRM
Repetitive peak off-state voltage
Repetitive peak reverse voltage
VDRM & VRRM,tp=10ms
VDSM &VRSM= VDRM &VRRM+100V
125 1900   2500 V
IDRM
IRRM
Repetitive peak off-state current
Repetitive peak reverse current
VDM=VDRM
VRM= VRRM
125     250 mA
ITSM Surge on-state current 10ms half sine wave,
VR=0.6VRRM
125     44 KA
I2t I2T for fusing coordination     9680 A2s*103
VTO Threshold voltage   125     1.32 V
rT Forward slop resistance     0.14
VTM Peak on-state voltage ITM=5000A, F=78KN 125     2.02 V
dv/dt Critical rate of rise of off-state voltage VDM=0.67VDRM 125     500 V/μs
di/dt Critical rate of rise of on-state current VDM= 67%VDRM to 4000A,
Gate pulse tr ≤0.5μs IGM=1.5A
125     1000 A/μs
Irm Reverse recovery current ITM=2000A, tp=1000μs,
di/dt=-20A/μs,
VR=50V
125   187   A
trr Reverse recovery time   11.2   μs
Qrr Recovery charge   1049 1100 μC
tq Circuit commutated turn-off time ITM=2000A,tp=1000μs, ,VR=50V
dv/dt=-30V/μs,di/dt=-20A/μs
125 60   110 μs
IGT Gate trigger current VA=12V, IA=1A 25 40   450 mA
VGT Gate trigger voltage 0.9   4.5 V
IH Holding current 20   1000 mA
VGD Non-trigger gate voltage VDM=0.67VDRM 125 0.3     V
Rth(j-h) Thermal resistance
Junction to heatsink
At 180°sine, double side cooled
Clamping force 78KN
      0.009 ℃ /W
Fm Mounting force     70   85 KN
Tstg Stored temperature     -40   140
Wt Weight       1900   g
Size Package box size 160×145×65 mm

 
PERFORMANCE CURVES FIGURE
 

Fig.1

Fig.2
 

Fig.3
 

Fig.4
 

Fig.5
 

Fig.6


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